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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 DESCRIPTION *With TO-220F package *High voltage. *High speed switching APPLICATIONS *For switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE 900 800 7 3 6 1.5 35 150 -55~150 UNIT V V V A A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA ; IB=0 IC=0.7A ;IB=0.14A IC=0.7A ;IB=0.14A VCB=800V; IE=0 VEB=7V; IC=0 IC=0.7A ; VCE=4V IE=0; VCB=10V;f=1MHz IE=-0.3A ; VCE=12V 10 40 6 MIN 800 2SC4908 TYP. MAX UNIT V 0.5 1.2 100 100 30 V V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=0.7A; IB1=0.1A IB2=-0.35A VCC=250V ,RL=357 1.0 5.0 1.0 s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4908 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4908 4 |
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